High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

Published on in MARTIN CLAUS GROUP

New Publication: Double gate (DG) RFETs have due to an additional program gate a more complex structure and suffer from increased wiring efforts. Both of them hamper the miniaturazition of the transistor footprint as needed for digital applications. A new RFET design with just one single gate is proposed which provides the same functionality and characteristics as the more complex DG RFET. (G. Darbandy et al., "High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design" in IEEE Transactions on Nanotechnology, DOI: 10.1109/TNANO.2016.2521897)

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