Martin Claus Group News

High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

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New Publication: Double gate (DG) RFETs have due to an additional program gate a more complex structure and suffer from increased wiring efforts. Both of them hamper the miniaturazition of the transistor footprint as needed for digital applications. A new RFET design with just one single gate is proposed which provides the same functionality and characteristics as the more complex DG RFET. (G. Darbandy et al., "High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design" in IEEE Transactions on Nanotechnology, DOI: 10.1109/TNANO.2016.2521897)

Electron Back Scattering in CNTFETs

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New publication: Physics-based compact models for CNTFETs have failed so far to correctly predict the transistor behavior above the onset of optical scattering. By considering analytically that carrier injection from the drain is suppressed once source injected carriers are accumulated at the band edge due to optical phonon scattering, the applicability of the compact models has successfully been extended beyond the onset of optical phonon scattering. (I. Bejenari et al., "Electron Back Scattering in CNTFETs" in Transactions of Electron Devices, 10.1109/TED.2015.2512180)

Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab-initio study

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New publication: Understanding the physics behind the contact resistance at metal-CNT interfaces is of crucial importance for the development of high-performance CNTFETs. Using parameter-free model, we show how the contact resistance and on-current of a carbon nanotube FET depend on the quality of the metal/CNT contact for a variety of three metals representing week, medium and week metal-CNT interaction strength. (A. Fediai et al,.“Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab-initio study.”  in Applied Physics Letters, doi: 10.1063/1.4962439)

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

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New publication: Emerging transistor technologies are very often affected by traps leading to unintentional memory effects and inconsistent device characteristics by means of conventional characterization techniques. Pulsed measurements with narrow pulses and very small duty cycles allow a trap-free electrical device characterization preventing false conclusions for technology development and device performance. (M. Haferlach et al., "Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges" in IEEE Transactions on Nanotechnology, 10.1109/TNANO.2016.2564925)

Dr. Martin Claus: Research Stay in Stanford with Bao Group

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Dr.-Ing. Martin Claus is currently a visiting researcher in the research group of Prof. Zhenan Bao at the Stanford University in California, USA. From April to December 2016 he will work on the modeling and characterization of CNT-based thin film transistors and circuits for stretchable electronics.

For more info please see this article:

https://baogroup.stanford.edu/index.php/research-highlights/355-stretchable-carbon-nanotube-transistors-are-put-to-the-test

Spring MOS-AK Workshop @ cfaed

The MOS-AK Association held its annual spring compact modeling and Verilog-A standardization workshop at the Center for Advancing Electronics Dresden (cfaed), TU Dresden, on March 18, 2016.

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More than 40 registered academic researchers and modeling engineers attended two sessions to hear 10 technical compact modeling engineering talks. This year, compact modeling of emerging technologies such as organic transistors, carbon nanotube transistors and chemical transistors were in focus with contributions from industry and academia. “The talks and discussions revealed an increasing interest of industry and system designers to evaluate the performance and applicability of emerging technologies,” summarized cfaed group leader Dr.-Ing. Martin Claus, local organizer of the workshop in Dresden. He pointed out that “compact models bridge the gap between technology development and applications by providing useful insights for guiding the technology development and by enabling circuit design.” MOS-AK is a dedicated forum for engineers and scientists working in that field.

The MOS-AK Dresden workshop presentations are available here:

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Research Group Leader Dr.-Ing Martin Claus Held Summer Course in Brazil

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RGL Dr. Martin Claus giving a lecture

cfaed Research Group Leader Dr.-Ing. Martin Claus held an international summer course in Computational Electronics (CELTIC) at the Universidade de Brasília (UnB). The summer course was about current transport phenomena in organic semiconductors. With this course, being already the second edition, Dr. Claus' fifth research stay within the CAPES project NAnoPiE at UnB ended.

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