On the way towards a reproducible waver-level technology for high performance FETs, we have applied a length separation process for SWCNTs and conducted a systematic study with FETs using different length fractions on the statistical level. It could be shown that sorted long SWCNTs outperform in FETs and give a device yield of > 95%. Moreover, compared to unsorted sc-SWCNTs, performance parameters such as subthreshold swing and hole mobility of FETs could be improved significantly. (S.Böttger et al. in Nanotechnology (2016) 10.1088/0957-4484/27/43/435203)