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With developing the chemistry of graphene, it became clear that lattice-defects in graphene are decisive to understand reactivity and physical properties of derived materials.[1] About one decade ago, we succeeded in synthesizing graphene in a wetchemical approach, starting from flakes of graphite by isolating the processible intermediate oxo-functionalized graphene (oxo-G).[2] With oxo-functionalization of graphene, the graphene lattice remined by far intact, contrasting the lattice integrity of graphene oxide. Such oxo-G can now be utilized as a platform to investigate chemical reactions proceeding at the surface or rims of the material, depending on the density of defects. With the gained understanding, different synthetic methods to oxo-G could be developed and the materials electronic properties were investigated by transistor devices.[3, 4, 5] In addition, the thermal disproportionation of oxo-G was investigated and local semiconductive charge transport properties were revealed.[6] Moreover, defects possess a guiding effect for the regiochemical addition of addends, as shown for chemical and electrochemical methods.[7] Recently, we investigated the growth of pores in graphene, starting from vacancy defects and pores with diameters of up to 500 nm can be fabricated without disintegration of flakes.[8] Here, I present the recent results in those areas.
[1] P. Feicht, S. Eigler, ChemNanoMat 2018, 4, 244.
[2] S. Eigler, M. Enzelberger-Heim, S. Grimm, P. Hofmann, W. Kroener, A. Geworski, C. Dotzer, M. Rockert, J. Xiao, C. Papp, O. Lytken, H. P. Steinrück, P. Müller, A. Hirsch, Adv. Mater. 2013, 25, 3583.
[3] P. Feicht, J. Biskupek, T. E. Gorelik, J. Renner, C. E. Halbig, M. Maranska, F. Puchtler, U. Kaiser, S. Eigler, Chem.-Eur. J. 2019, 25, 8955.
[4] Z. Wang, Q. Yao, Y. Hu, C. Li, M. Hußmann, B. Weintrub, J. N. Kirchhof, K. Bolotin, T. Taniguchi, K. Watanabe, S. Eigler, RSC Adv. 2019, 9, 38011.
[5] Z. Wang, Q. Yao, S. Eigler, Chem. Eur. J. 2020, 26, 6484.
[6] Z. Wang, Q. Yao, C. Neumann, F. Borrnert, J. Renner, U. Kaiser, A. Turchanin, H. J. W. Zandvliet, S. Eigler, Angew. Chem. Int. Ed. 2020, 59, 13657.
[7] C. E. Halbig, R. Lasch, J. Krull, A. S. Pirzer, Z. Wang, J. N. Kirchhof, K. I. Bolotin, M. R. Heinrich, S. Eigler, Angew. Chem. Int. Ed. 2019, 58, 3599.
[8] C. N. Y. Wang, M. Hußmann, Q. Cao, Y. Hu, O. Garrity, P. Kusch, A. Turchanin, S. Eigler, Adv. Mater. Int. 2021, 10.1002/admi.202100783.