Conference: Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)
14.04.2015 (Tuesday) - 16.04.2015 (Thursday) Hilton Dresden , An der Frauenkirche 5 , 01067 Dresden
The FCMN brings together scientists and engineers interested in all aspects of the characterization technology needed for nanoelectronic materials and device research, development, and manufacturing. All approaches are welcome: chemical, physical, electrical, magnetic, optical, in-situ, and real-time control and monitoring. The conference summarizes major issues and provides critical reviews of important semiconductor techniques needed as the semiconductor industry moves to silicon nanoelectronics and beyond.
The conference will consist of formal invited presentation sessions and poster sessions for contributed papers. The poster papers will cover new developments in characterization and metrology especially at the nanoscale.
Confirmed Invited Speakers
We already have many outstanding invited speakers confirmed to speak at the conference, with more being added frequently! Please note, the following list is subject to change.
- Bill Bottoms, Third Millennium Test Solutions, “Material Requirements for 3D IC and Packaging”
- Andre Clausner, Fraunhofer IKTS, “Combined Nanoindentation and AFAM for Mechanical Characterization of Ultra Low-k Thin Films”
- Peter Czurratis, PVA Tepla, “New Scanning Acoustic Microscopy technologies applied to 3D integration applications"
- Jürgen Gluch, TU Dresden/Fraunhofer IKTS, “X-ray Tomography for Process Development and Failure Analysis”
- Karen Henry (Intel) and Thomas Kelley (Cameca Instruments, Inc.), “Advances in Atom Probe Metrology”
- Paul Ho, University of Texas, “Thermo-Mechanical Reliability of TSVs”
- Joseph Kline, National Institute of Standards and Technology, “Overview of Status of CD-SAXS for High Throughput Measurements”
- Reinhold Krause-Rehberg, University Halle, “Positron Annihilation Spectroscopy Measurements for Porosimetry Determination of Micro- and Meso-porous Systems”
- Philippe Leray, Imec, “Metrology for Patterning”
- Markus Löffler and Walter Weber, Technische Universität Dresden, “Element and Strain Analysis in Si Nanowires”
- Steve Pennycook, Oak Ridge National Laboratory, “Probing Optical and Electronic Properties of Defects Through Scanning Transmission Electron Microscopy and First-Principles Theory”
- Sesh Ramaswami, Applied Materials, “Technology Requirement and Process Control Solutions”
- Evan Reed, Stanford University, “Phase Change Properties and Strain Engineering in 2D Materials”
- Jean-Luc Rouviere, CEA-Leti, “Strain Characterization at Nanoscale Using Electron Beam Based Techniques”
- Frank Schwierz, TU-Ilmenau, “2D Materials Beyond Graphene for Future Electronics”
- Thomas Silva, National Institute of Standards and Technology, “Characterization of Magnetic Nanostructures for STT-RAM Applications By Use Of Macro- and Micro-Scale Ferromagnetic Resonance”
- Valeriy Sukharev, Mentor Graphics, “DFM and DFR Requirements for 3D Stacked Systems to Materials Data and Characterization Techniques”
- Tuyen Tran, Intel, “Defect Inspection for Advanced Technology Nodes”
- Paul van der Heide, Global Foundries, “CMOS Characterization/Metrology Challenges for the Lab to the Fab”
- Wilfried Vandervorst, Imec, “Paradigm Shift in Metrology for Probing 3D-Structrures and Confined Volumes”
- Kris Vanstreels, Imec, “Analytical Challenges and Solutions for Chip-Package Interaction”
- Suresh Venkatesan, Global Foundries, “Wide Perspective on Today’s Semiconductor Industry”
- Bob Westervelt, Harvard, “Imaging Electron Motion in Nanostructures”