Nanowire Research Group

banner walter weber

Group Leader:

Dr. Walter Weber


Dr. Weber studied Electrical Engineering at the TU Munich and received his PhD in Electrical Engineering from the same university in 2007. From 2002 till 2004 he worked at the Infineon AG - Corporate Research Laboratories in Munich in the group of L. Risch developing technology for different types of nanometer scale double-gate transistors including finFETs, multi-bit trigate flash cells and planar double gate FETs.

From 2004 until 2008 he performed his PhD research at the Infineon AG and Qimonda AG - Materials Research Department under the supervision of Prof. F. Kreupl, Prof. H. Riechert and Prof. P. Lugli. His focus was on the synthesis of nanowires heterostructures and the conception of novel nanowire based transistors with programmable polarity.

Since 2008 he is a Senior Scientist at Namlab gGmbH leading activities on Beyond-Moore emerging devices and circuits. In parallel, since 2013 he is also acting as a Research Group Leader at cfaed at TU Dresden.


Research Vision

The research group focuses on the conception of novel nanoelectronic devices and energy storage cells as key technologies for future electronic systems. Our research spans the complete chain from the nano- material synthesis through nano-device fabrication & characterization up to the investigation of demonstrator circuits. This approach enables us to efficiently direct nano-electronic technologies to system relevant implementations.


Research Topics

Main topics are nanowire based reconfigurable transistors and circuits, transducers for sensors, nanoscale contact properties to Si, Ge and C as well as silicon nanowire based anode assemblies for Li and Li-S batteries.

Nanowire based Reconfigurable Transistors

An exceptional opportunity to perpetrate the virtuous cycle of electronics beyond conventional Moore´s scaling is to extend the functional diversity of the integrated electronic devices. Our unique reconfigurable nanowire approach focuses on establishing a multifunctional electronics platform able to perform a higher number of functions with the same hardware complexity as conventional CMOS electronics. To this end we focus on the development of the key physical device concepts, circuit theory and necessary technology - platform.

The reconfigurable nanowire field effect transistor (RFET) conceived here is a four terminal device that provides unipolar n- or p-type electrical characteristics as selected on-the-fly by an electric select signal [1, 2]. The enhanced functionality is enabled by the selective transport through two individually gated nanoscale NiSi2 / intrinsic-Si Schottky junctions. The gate overlapping the source junction controls the output current, while the gate on the drain side is used to block the undesired carrier type.
Our recent efforts have been on enhancing the RFET devices to successfully tackle the largest hurdle for a practicable implementation in circuits: symmetry of the current-voltage characteristics. Given the different nature of electron and hole transport in most semiconductors significantly different on- currents have been delivered by n- and p- type devices. Over the last four decades, standard CMOS technology has had to design and integrate p-type devices with the double of width than n- type devices to obtain equivalent on-currents.

In our unique single MOS approach demonstrated in [3] the electron and hole injection properties at the source and drain junctions are fine-tuned by radial strain incorporation into the nanowires, truly delivering symmetric n- and p- characteristics from the same device.

Our Single MOS approach is the first electronic device of any kind and material to show symmetric n- and p- characteristics from the same physical structure and with a single supply voltage. It provides a simple platform to overcome the arduous separate adjustment of p- and n- type FETs. The single MOS concept does not require intentional doping and is by principle scalable to a small device area. Almost all process steps for device fabrication are compatible with state-of-the-art Si CMOS manufacturing techniques.


Single MOS Complementary Nanowire Circuits

The higher expressive value of reconfigurable FETs opens new opportunities at the logic circuit level. Two interesting circuit strategies that were previously not accessible with conventional FETs are opened to be studied. In the first one, layouting and mapping of circuits is reduced to a single type of universal device of a sole material composition and size. This is distinctly different to state-of-the-art CMOS, where designs cope with different compositions, size, shared implantation wells and local isolations between different wells. In the second strategy, new types of circuits can be studied, that can have multiple functionalities as programmed through the individual select signals. At the same time, the larger device size and the additional number of select signals need are challenging aspects that are being under continuous study. Both strategies are being investigated at Namlab.

A first step towards studying the applicability of our single MOS approach was to build and characterize complementary inverter circuits built of these. These are simply integrated into a single nanowire structure [3]. Truly complementary operation, where considerable power consumption is only present during the switching event. The equivalent operation is also achieved when reversing the configuration, demonstrating a freely selectable circuit technology.
Due to the reconfigurability of our RFET devices, our single MOS approach deliver an increased value per building block. This is more evident for larger circuits. For example a four transistor NAND gate can be dynamically reprogrammed to resemble a NOR functionality, as proven by simulations [4]. The routing of the program signals and supply potentials is solved by adding an inverter, resulting in a six transistor cell, which can be dynamically switched between both functions.
In addition to the technological benefit and functional extension, the single MOS technology requires comparatively small gate capacitances, as only a small region is gated. This is beneficial, since lower drive currents are needed to drive the neighboring circuit stages within a reasonable delay time.


[1]: A. Heinzig et al. Nano Letters 12, pp 119-124 (2012)
[2]: D. Martin et al. Physical Review Letters 107, 216807 (2011)
[3]: A. Heinzig et al. Nano Letters 13 pp 4176–4181 (2013)
[4]: J. Trommer et al. Electron Device Letters (IEEE) 35, 141 (2014)


Si-Nanowire Anodes for Li-Ion Batteries


Current Research Projects

Funding Agency Project
Currently Running Programs
DFG ReproNano II
BMBF Bamosa
DFG Excellence Cluster cfaed
Helmholtz Gemeinschaft Graduate School NanoNet
Finished Programs
DFG ReproNano I


Group Members


  • Dr. Ing. Tim Baldauf (Device Simulations)
  • Dr. rer. nat. Matthias Grube (Nanowire growth and batteries)
  • Dr. rer. nat. Andreas Krause (Carbon deposition and batteries)
  • Dr. Ing. André Heinzig (Reconfigurable silicon nanowire devices)
  • Dr. So-Jeong Park (Nanowire devices)
  • Dr. Dae-Young Jeon (Carbon contacts and nanodevice characterization)
  • Dipl.-Ing. Jens Trommer (Reconfigurable germanium nanowire devices)
  • Shared PhD Students in collaborations:
  • Dipl.-Phys. Sebastian Pregl (Nanowire based transducers for sensors in collaboration with Prof. Cuniberti)
  • M. Sc. Dipjyoti Deb (Nanowire based platform for molecular electronics in collaboration with Dr. Arthur Erbe HZDR)
  • Dipl. Ing. Andreas Gang (Nanowire based sensors in collaboration with Prof. Cuniberti)

Former group members:

  • Dr. rer. Nat. Dominik Martin
  • Dipl. Phys. Vase Jovanov
  • M. Sc. Esperanza Navarro Fuentes



See publications list at Google Scholar


Contact Details

Dr. Walter M. Weber

Host Institute: (Nano-electronic Materials Laboratory)

NaMLab GmbH
Nöthnitzer Str. 64
01187 Dresden

Phone: +49 (0)351 21 24 990 22
Fax: +49 (0)351 475 83 900


  • 2017

  • Michael Raitza, Jens Trommer, Akash Kumar, Marcus Völp, Dennis Walter, Walter Weber, Thomas Mikolajick, "Exploiting Transistor-Level Reconfiguration to Optimize Combinational Circuits" (to appear), Proceedings of the 2017 Design, Automation & Test in Europe Conference & Exhibition, March 2017. [Bibtex & Downloads]
  • 2016

  • Tim Baldauf, Andre Heinzig, Thomas Mikolajick, Walter Michael Weber, Jens Trommer, "Strain-engineering for improved tunneling in reconfigurable silicon nanowire transistors" , In Proceeding: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1–4, 2016. [Bibtex & Downloads]
  • Sebastian Pregl, André Heinzig, Larysa Baraban, Gianaurelio Cuniberti, Thomas Mikolajick, Walter M Weber, "Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logic" , In IEEE Transactions on Nanotechnology, IEEE, vol. 15, no. 3, pp. 549–556, 2016. [Bibtex & Downloads]
  • Jens Trommer, Tim Baldauf, Thomas Mikolajick, Walter M Weber, Michael Raitza, others, "Reconfigurable nanowire transistors with multiple independent gates for efficient and programmable combinational circuits" , In Proceeding: 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 169–174, 2016. [Bibtex & Downloads]
  • Walter Weber, "(Invited) High-Yield Reconfigurable Silicon and Germanium Nanowire Transistors and Compact Logic Circuits" , In Proceeding: PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016. [Bibtex & Downloads]
  • 2015

  • Andreas Krause, Jan Brueckner, Susanne Doerfler, Florian M Wisser, Holger Althues, Matthias Grube, Jan Martin, Julia Grothe, Thomas Mikolajick, Walter M Weber, "Stability and Performance of Heterogeneous Anode Assemblies of Silicon Nanowires on Carbon Meshes for Lithium-Sulfur Battery Applications" , MRS Proceedings, vol. 1751, pp. mrsf14–1751, 2015. [doi] [Bibtex & Downloads]
  • Daniil Karnaushenko, Bergoi Ibarlucea, Sanghun Lee, Gungun Lin, Larysa Baraban, Sebastian Pregl, Michael Melzer, Denys Makarov, Walter M Weber, Thomas Mikolajick, others, "Light Weight and Flexible High-Performance Diagnostic Platform" , In Advanced healthcare materials, Wiley Online Library, 2015. [doi] [Bibtex & Downloads]
  • Jens Trommer, Stefan Slesazeck, Walter M Weber, Andre Heinzig, Tim Baldauf, Thomas Mikolajick, "Effect of independently sized gates on the delay of reconfigurable silicon nanowire transistor based circuits" , In Proceeding: Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, pp. 17–20, 2015. [doi] [Bibtex & Downloads]
  • Jens Trommer, Andre Heinzig, Tim Baldauf, Stefan Slesazeck, Thomas Mikolajick, Walter Weber, "Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors" , IEEE, 2015. [doi] [Bibtex & Downloads]
  • Sayanti Banerjee, Markus Löffler, Uwe Muehle, Katarzyna Berent, Walter Weber, Ehrenfried Zschech, "TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices" , In Advanced Engineering Materials, Wiley Online Library, 2015. [Bibtex & Downloads]
  • Daniil Karnaushenko, Bergoi Ibarlucea, Sanghun Lee, Gungun Lin, Larysa Baraban, Sebastian Pregl, Michael Melzer, Denys Makarov, Walter M Weber, Thomas Mikolajick, others, "Flexible Electronics: Light Weight and Flexible High-Performance Diagnostic Platform (Adv. Healthcare Mater. 10/2015)" , In Advanced healthcare materials, Wiley Online Library, vol. 4, no. 10, pp. 1419–1419, 2015. [Bibtex & Downloads]
  • Thomas Mikolajick, Walter M Weber, "Silicon Nanowires: Fabrication and Applications" , Chapter in Anisotropic Nanomaterials, Springer, pp. 1–25, 2015. [Bibtex & Downloads]
  • Jian Zhang, Jens Trommer, Walter Michael Weber, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, "On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET" , In Electron Devices Society, IEEE Journal of the, IEEE, vol. 3, no. 6, pp. 452–456, 2015. [Bibtex & Downloads]
  • Dae-Young Jeon, Sebastian Pregl, So Jeong Park, Larysa Baraban, Gianaurelio Cuniberti, Thomas Mikolajick, Walter M Weber, "Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires" , In Nano letters, ACS Publications, vol. 15, no. 7, pp. 4578–4584, 2015. [Bibtex & Downloads]
  • Andreas Gang, Natalie Haustein, Larysa Baraban, Walter M Weber, Thomas Mikolajick, Julian Thiele, Gianaurelio Cuniberti, "Microfluidic alignment and trapping of 1D nanostructures–a simple fabrication route for single-nanowire field effect transistors" , In RSC Advances, Royal Society of Chemistry, vol. 5, no. 115, pp. 94702–94706, 2015. [Bibtex & Downloads]
  • Tim Baldauf, Andre Heinzig, Jens Trommer, Thomas Mikolajick, Walter Michael Weber, "Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors" , In Electron Device Letters, IEEE, IEEE, vol. 36, no. 10, pp. 991–993, 2015. [Bibtex & Downloads]
  • Andreas Krause, Matthias Grube, Thomas Mikolajick, Walter M Weber, "Comparison of Silicon Nanowire Growth on SiO2 and on Carbon Substrates" , In ECS Transactions, The Electrochemical Society, vol. 70, no. 1, pp. 69–78, 2015. [Bibtex & Downloads]
  • 2014

  • Daijiro Nozaki, Jens Kunstmann, Felix Zörgiebel, Sebastian Pregl, Larysa Baraban, Walter M Weber, Thomas Mikolajick, Gianaurelio Cuniberti, "Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environment" , In Nano Research, Springer, vol. 7, no. 3, pp. 380–389, 2014. [doi] [Bibtex & Downloads]
  • Eunhye Baek, Sebastian Pregl, Mehrdad Shaygan, Lotta Römhildt, Walter M Weber, Thomas Mikolajick, Dmitry A Ryndyk, Larysa Baraban, Gianaurelio Cuniberti, "Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors" , In Nano Research, Springer, pp. 1–12, 2014. [doi] [Bibtex & Downloads]
  • Felix M Zörgiebel, Sebastian Pregl, Lotta Römhildt, Jörg Opitz, W. Weber, T. Mikolajick, Larysa Baraban, Gianaurelio Cuniberti, "Schottky barrier-based silicon nanowire pH sensor with live sensitivity control" , In Nano Research, Springer, vol. 7, no. 2, pp. 263–271, 2014. [doi] [Bibtex & Downloads]
  • Jürgen Beister, Andre Wachowiak, André Heinzig, Jens Trommer, Thomas Mikolajick, Walter M Weber, "Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices" , In physica status solidi (c), Wiley Online Library, vol. 11, no. 11-12, pp. 1611–1617, 2014. [doi] [Bibtex & Downloads]
  • J. Trommer, A. Heinzig, S. Slesazeck, T. Mikolajick, WM Weber, "Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors" , In Electron Device Letters, IEEE, IEEE, vol. 35, no. 1, pp. 141–143, 2014. [doi] [Bibtex & Downloads]
  • Markus Löffler, Sayanti Banerjee, Jens Trommer, Andre Heinzig, Walter Weber, Ehrenfried Zschech, "In-Situ Investigations of Individual Nanowires within a FIB/SEM System" , In Microscopy and Microanalysis, Cambridge Univ Press, vol. 20, no. S3, pp. 360–361, 2014. [Bibtex & Downloads]
  • Walter M Weber, Jens Trommer, Matthias Grube, Andre Heinzig, Markus Konig, Thomas Mikolajick, "Reconfigurable silicon nanowire devices and circuits: Opportunities and challenges" , In Proceeding: Design, Automation and Test in Europe Conference and Exhibition (DATE), 2014, pp. 1–6, 2014. [doi] [Bibtex & Downloads]
  • W. Weber, Andre Heinzig, Jens Trommer, Matthias Grube, Franz Kreupl, Thomas Mikolajick, "Reconfigurable Nanowire Electronics–Enabling a Single CMOSCircuit Technology" , IEEE, 2014. [doi] [Bibtex & Downloads]
  • WM Weber, A. Heinzig, J. Trommer, D. Martin, M. Grube, T. Mikolajick, "Reconfigurable nanowire electronics–A review" , In Solid-State Electronics, Elsevier, vol. 102, pp. 12–24, 2014. [Bibtex & Downloads]
  • Jens Trommer, André Heinzig, Anett Heinrich, Paul Jordan, Matthias Grube, Stefan Slesazeck, Thomas Mikolajick, Walter M Weber, "Material Prospects of Reconfigurable Transistor (RFETs)–From Silicon to Germanium Nanowires" , MRS Proceedings, vol. 1659, pp. 225–230, 2014. [Bibtex & Downloads]
  • 2013

  • André Heinzig, Thomas Mikolajick, Jens Trommer, Daniel Grimm, Walter M Weber, "Dually active silicon nanowire transistors and circuits with equal electron and hole transport" , In Nano letters, ACS Publications, vol. 13, no. 9, pp. 4176–4181, 2013. [doi] [Bibtex & Downloads]
  • Dominik Martin, Matthias Grube, Wenke Weinreich, Johannes Müller, Walter M Weber, Uwe Schröder, Henning Riechert, Thomas Mikolajick, "Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates" , In Journal of Applied Physics, AIP Publishing, vol. 113, no. 19, pp. 194103, 2013. [doi] [Bibtex & Downloads]
  • Matthias Grube, Dominik Martin, Walter M Weber, Thomas Mikolajick, Henning Riechert, "Structural and dielectric properties of sputtered SrxZr (1- x) Oy" , In Journal of Applied Physics, AIP Publishing, vol. 113, no. 22, pp. 224107, 2013. [Bibtex & Downloads]
  • Sebastian Pregl, F. Zorgiebel, Larysa Baraban, Gianaurelio Cuniberti, T. Mikolajick, Walter Weber, "Channel length dependent sensor response of Schottky-barrier FET pH sensors" , In Proceeding: SENSORS, 2013 IEEE, pp. 1–4, 2013. [doi] [Bibtex & Downloads]
  • Sebastian Pregl, Walter M Weber, Daijiro Nozaki, Jens Kunstmann, Larysa Baraban, Joerg Opitz, Thomas Mikolajick, Gianaurelio Cuniberti, "Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output" , In Nano Research, Springer, vol. 6, no. 6, pp. 381–388, 2013. [doi] [Bibtex & Downloads]
  • Thomas Mikolajick, André Heinzig, Jens Trommer, Sebastian Pregl, Matthias Grube, Gianaurelio Cuniberti, Walter M Weber, "Silicon nanowires–a versatile technology platform" , In physica status solidi (RRL)-Rapid Research Letters, Wiley Online Library, vol. 7, no. 10, pp. 793–799, 2013. [doi] [Bibtex & Downloads]
  • Walter M Weber, Jens Trommer, Dominik Martin, Matthias Grube, Andre Heinzig, Thomas Mikolajick, "Reconfigurable nanowire electronics—Device principles and circuit prospects" , Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European, pp. 246–251, 2013. [doi] [Bibtex & Downloads]
  • 2012

  • AP Graham, T. Jay, S. Jakschik, S. Knebel, W. Weber, U. Schroeder, T. Mikolajick, "An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications" , In Journal of Applied Physics, AIP Publishing, vol. 111, no. 12, pp. 124511, 2012. [doi] [Bibtex & Downloads]
  • 2011

  • André Heinzig, Stefan Slesazeck, Franz Kreupl, Thomas Mikolajick, Walter M Weber, "Reconfigurable silicon nanowire transistors" , In Nano letters, ACS Publications, vol. 12, no. 1, pp. 119–124, 2011. [doi] [Bibtex & Downloads]
  • A. Krause, WM Weber, U. Schröder, D. Pohl, B. Rellinghaus, J. Heitmann, T. Mikolajick, "Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks" , In Applied Physics Letters, AIP Publishing, vol. 99, no. 22, pp. 222905, 2011. [doi] [Bibtex & Downloads]
  • Dominik Martin, Andre Heinzig, Matthias Grube, Lutz Geelhaar, Thomas Mikolajick, Henning Riechert, Walter M Weber, "Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors" , In Physical review letters, APS, vol. 107, no. 21, pp. 216807, 2011. [doi] [Bibtex & Downloads]
  • 0

  • T. Mikolajick, A. Heinzig, J. Trommer, M. Grube, W. Weber, "Reconfigurable Si-Nanowire Field Effect Transistors as a Building Block for Post Moore Electronics" . [Bibtex & Downloads]