Publications
2017
- Felix Holzmüller, Nico Gräßler, Mona Sedighi, Eric Müller, Martin Knupfer, Olaf Zeika, Koen Vandewal, Christian Koerner, Karl Leo, "H-aggregated small molecular nanowires as near infrared absorbers for organic solar cells" , In Organic Electronics, Elsevier BV, vol. 45, pp. 198–202, Jun 2017. [doi] [Bibtex & Downloads]
H-aggregated small molecular nanowires as near infrared absorbers for organic solar cells
×Reference
Felix Holzmüller, Nico Gräßler, Mona Sedighi, Eric Müller, Martin Knupfer, Olaf Zeika, Koen Vandewal, Christian Koerner, Karl Leo, "H-aggregated small molecular nanowires as near infrared absorbers for organic solar cells" , In Organic Electronics, Elsevier BV, vol. 45, pp. 198–202, Jun 2017. [doi]
Bibtex
@article{Holzmller2017,
doi = {10.1016/j.orgel.2017.03.009},
url = {https://doi.org/10.1016%2Fj.orgel.2017.03.009},
year = {2017},
month = {jun},
publisher = {Elsevier {BV}},
volume = {45},
pages = {198--202},
author = {Felix Holzm\"{u}ller and Nico Gr\"{a}{\ss}ler and Mona Sedighi and Eric M\"{u}ller and Martin Knupfer and Olaf Zeika and Koen Vandewal and Christian Koerner and Karl Leo},
title = {H-aggregated small molecular nanowires as near infrared absorbers for organic solar cells},
journal = {Organic Electronics}
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- Jens Trommer, André Heinzig, Uwe Mühle, Markus Löffler, Annett Winzer, Paul M. Jordan, Jürgen Beister, Tim Baldauf, Marion Geidel, Barbara Adolphi, Ehrenfried Zschech, Thomas Mikolajick, Walter M. Weber, "Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions" , In ACS Nano, American Chemical Society (ACS), Jan 2017. [doi] [Bibtex & Downloads]
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
×Reference
Jens Trommer, André Heinzig, Uwe Mühle, Markus Löffler, Annett Winzer, Paul M. Jordan, Jürgen Beister, Tim Baldauf, Marion Geidel, Barbara Adolphi, Ehrenfried Zschech, Thomas Mikolajick, Walter M. Weber, "Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions" , In ACS Nano, American Chemical Society (ACS), Jan 2017. [doi]
Bibtex
@article{Trommer2017,
doi = {10.1021/acsnano.6b07531},
url = {https://doi.org/10.1021%2Facsnano.6b07531},
year = {2017},
month = {jan},
publisher = {American Chemical Society ({ACS})},
author = {Jens Trommer and Andr{\'{e}} Heinzig and Uwe M\"{u}hle and Markus L\"{o}ffler and Annett Winzer and Paul M. Jordan and J\"{u}rgen Beister and Tim Baldauf and Marion Geidel and Barbara Adolphi and Ehrenfried Zschech and Thomas Mikolajick and Walter M. Weber},
title = {Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions},
journal = {{ACS} Nano}
}
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- Chongqing Yang, Karl Sebastian Schellhammer, Frank Ortmann, Sai Sun, Renhao Dong, Melike Karakus, Zoltán Mics, Markus Löffler, Fan Zhang, Xiaodong Zhuang, Enrique Cánovas, Gianaurelio Cuniberti, Mischa Bonn, Xinliang Feng, "Coordination Polymer Framework-Based On-Chip Micro-Supercapacitors with AC Line-Filtering Performance" , In Angewandte Chemie International Edition, Wiley-Blackwell, 2017. [doi] [Bibtex & Downloads]
Coordination Polymer Framework-Based On-Chip Micro-Supercapacitors with AC Line-Filtering Performance
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Chongqing Yang, Karl Sebastian Schellhammer, Frank Ortmann, Sai Sun, Renhao Dong, Melike Karakus, Zoltán Mics, Markus Löffler, Fan Zhang, Xiaodong Zhuang, Enrique Cánovas, Gianaurelio Cuniberti, Mischa Bonn, Xinliang Feng, "Coordination Polymer Framework-Based On-Chip Micro-Supercapacitors with AC Line-Filtering Performance" , In Angewandte Chemie International Edition, Wiley-Blackwell, 2017. [doi]
Bibtex
@article{Yang2017,
doi = {10.1002/anie.201700679},
url = {https://doi.org/10.1002%2Fanie.201700679},
year = {2017},
publisher = {Wiley-Blackwell},
author = {Chongqing Yang and Karl Sebastian Schellhammer and Frank Ortmann and Sai Sun and Renhao Dong and Melike Karakus and Zolt{\'{a}}n Mics and Markus L\"{o}ffler and Fan Zhang and Xiaodong Zhuang and Enrique C{\'{a}}novas and Gianaurelio Cuniberti and Mischa Bonn and Xinliang Feng},
title = {Coordination Polymer Framework-Based On-Chip Micro-Supercapacitors with {AC} Line-Filtering Performance},
journal = {Angewandte Chemie International Edition}
}
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2016
- Aranzazu Garitagoitia Cid, Elham Moayedi, Rudiger Rosenkranz, Andre Clausner, Khashayar Pakbaz, Ehrenfried Zschech, "Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector" , In IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, no. 4, pp. 461–464, Dec 2016. [doi] [Bibtex & Downloads]
Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector
×Reference
Aranzazu Garitagoitia Cid, Elham Moayedi, Rudiger Rosenkranz, Andre Clausner, Khashayar Pakbaz, Ehrenfried Zschech, "Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector" , In IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, no. 4, pp. 461–464, Dec 2016. [doi]
Bibtex
@article{GaritagoitiaCid2016,
doi = {10.1109/tdmr.2016.2628166},
url = {https://doi.org/10.1109%2Ftdmr.2016.2628166},
year = {2016},
month = {dec},
publisher = {Institute of Electrical and Electronics Engineers ({IEEE})},
volume = {16},
number = {4},
pages = {461--464},
author = {Aranzazu Garitagoitia Cid and Elham Moayedi and Rudiger Rosenkranz and Andre Clausner and Khashayar Pakbaz and Ehrenfried Zschech},
title = {Non-Destructive Imaging of Organosilicate Glass ({OSG}) Thin Films at Low Voltage With the {EsB} Detector},
journal = {{IEEE} Transactions on Device and Materials Reliability}
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- P. Czaja, J. Przewoźnik, Ł. Gondek, L. Hawelek, A. Żywczak, E. Zschech, "Low temperature stability of 4O martensite in Ni49.1Mn38.9Sn12 metamagnetic Heusler alloy ribbons" , In Journal of Magnetism and Magnetic Materials, Elsevier BV, Jul 2016. [doi] [Bibtex & Downloads]
Low temperature stability of 4O martensite in Ni49.1Mn38.9Sn12 metamagnetic Heusler alloy ribbons
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P. Czaja, J. Przewoźnik, Ł. Gondek, L. Hawelek, A. Żywczak, E. Zschech, "Low temperature stability of 4O martensite in Ni49.1Mn38.9Sn12 metamagnetic Heusler alloy ribbons" , In Journal of Magnetism and Magnetic Materials, Elsevier BV, Jul 2016. [doi]
Bibtex
@article{Czaja_2016,
title={Low temperature stability of 4O martensite in Ni49.1Mn38.9Sn12 metamagnetic Heusler alloy ribbons},
ISSN={0304-8853},
url={http://dx.doi.org/10.1016/j.jmmm.2016.07.065},
DOI={10.1016/j.jmmm.2016.07.065},
journal={Journal of Magnetism and Magnetic Materials},
publisher={Elsevier BV},
author={Czaja, P. and Przewoźnik, J. and Gondek, Ł. and Hawelek, L. and Żywczak, A. and Zschech, E.},
year={2016},
month={Jul}
}
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- Aránzazu Garitagoitia Cid, Rüdiger Rosenkranz, Ehrenfried Zschech, "Optimization of the SEM Working Conditions: EsB Detector at Low Voltage" , In Advanced Engineering Materials, vol. 18, no. 2, pp. 185–193, 2016. [doi] [Bibtex & Downloads]
Optimization of the SEM Working Conditions: EsB Detector at Low Voltage
×Reference
Aránzazu Garitagoitia Cid, Rüdiger Rosenkranz, Ehrenfried Zschech, "Optimization of the SEM Working Conditions: EsB Detector at Low Voltage" , In Advanced Engineering Materials, vol. 18, no. 2, pp. 185–193, 2016. [doi]
Bibtex
@article {ADEMADEM201500161,
author={Garitagoitia Cid, Aránzazu and Rosenkranz, Rüdiger and Zschech, Ehrenfried},
title={Optimization of the SEM Working Conditions: EsB Detector at Low Voltage},
journal={Advanced Engineering Materials},
volume={18},
number={2},
issn={1527-2648},
url={http://dx.doi.org/10.1002/adem.201500161},
doi={10.1002/adem.201500161},
pages={185--193},
year={2016},
}
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- Aránzazu Garitagoitia Cid, Mona Sedighi, Markus Löffler, Willem van Dorp, Ehrenfried Zschech, "Energy-Filtered Backscattered Imaging using Low Voltage Scanning Electron Microscopy: Characterizing Blends of ZnPc-C60 for Organic Solar Cells" (to appear), 2016. [doi] [Bibtex & Downloads]
Energy-Filtered Backscattered Imaging using Low Voltage Scanning Electron Microscopy: Characterizing Blends of ZnPc-C60 for Organic Solar Cells
×Reference
Aránzazu Garitagoitia Cid, Mona Sedighi, Markus Löffler, Willem van Dorp, Ehrenfried Zschech, "Energy-Filtered Backscattered Imaging using Low Voltage Scanning Electron Microscopy: Characterizing Blends of ZnPc-C60 for Organic Solar Cells" (to appear), 2016. [doi]
Bibtex
@article{cid2016energy,
author={Garitagoitia Cid, Aránzazu and Sedighi, Mona and Löffler, Markus and van Dorp, Willem and Zschech, Ehrenfried},
title={Energy-Filtered Backscattered Imaging using Low Voltage Scanning Electron Microscopy: Characterizing Blends of ZnPc-C60 for Organic Solar Cells},
doi={10.1002/adem.201600063},
year={2016},
}
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- Manuel Oliva-Ramirez, Angel Barranco, Markus Löffler, Francisco Yubero, Agustin R. González-Elipe, "Optofluidic Modulation of Self-Associated Nanostructural Units Forming Planar Bragg Microcavities" , In ACS Nano, vol. 10, no. 1, pp. 1256-1264, 2016. [doi] [Bibtex & Downloads]
Optofluidic Modulation of Self-Associated Nanostructural Units Forming Planar Bragg Microcavities
×Reference
Manuel Oliva-Ramirez, Angel Barranco, Markus Löffler, Francisco Yubero, Agustin R. González-Elipe, "Optofluidic Modulation of Self-Associated Nanostructural Units Forming Planar Bragg Microcavities" , In ACS Nano, vol. 10, no. 1, pp. 1256-1264, 2016. [doi]
Bibtex
@article{ramirez2016optofluidic,
author={Manuel Oliva-Ramirez and Angel Barranco and Markus Löffler and Francisco Yubero and Agustin R. González-Elipe},
title={Optofluidic Modulation of Self-Associated Nanostructural Units Forming Planar Bragg Microcavities},
journal={ACS Nano},
volume={10},
number={1},
pages={1256-1264},
year={2016},
doi={10.1021/acsnano.5b06625},
note={PMID: 26653767},
URL={http://dx.doi.org/10.1021/acsnano.5b06625},
eprint={http://dx.doi.org/10.1021/acsnano.5b06625}
}
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- J. Huang, M. Loeffler, W. Moeller, E. Zschech, "Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment" , In Microelectronics Reliability, vol. 64, no. , pp. 390-392, 2016. [doi] [Bibtex & Downloads]
Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment
×Reference
J. Huang, M. Loeffler, W. Moeller, E. Zschech, "Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment" , In Microelectronics Reliability, vol. 64, no. , pp. 390-392, 2016. [doi]
Abstract
Abstract Focused Ion Beam (FIB) milling is a widely used and important technique to prepare Transmission Electron Microscopy (TEM) lamella samples. However, it unavoidably introduces contamination in the samples like implanted ions. While the conventional ion-solid simulation model, Binary Collision Approximation (BCA), is unable to describe the \FIB\ process, a dynamic \BCA\ model is used in this study to predict the level of Ga implantation along the substrate depth. The \FIB\ process involves significant material transport and local composition alteration, which requires a dynamic model for simulation. To validate the dynamic \BCA\ model s application on simulating the \FIB\ process, atomic level composition analysis Atom Probe Tomography (APT) is performed on Ga \FIB\ processed silicon samples. The experimental data confirm that the dynamic \BCA\ model is capable to predict \FIB\ induced Ga ion implantation in silicon samples.
Bibtex
@article{Huang2016390,
title = Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment,
journal = Microelectronics Reliability,
volume = 64,
number = ,
pages = 390 - 392,
year = 2016,
note = Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,
issn = 0026-2714,
doi = http://dx.doi.org/10.1016/j.microrel.2016.07.087,
url = http://www.sciencedirect.com/science/article/pii/S002627141630230X,
author = J. Huang and M. Loeffler and W. Moeller and E. Zschech,
keywords = FIB,
keywords = APT,
keywords = BCA,
abstract = Abstract Focused Ion Beam (FIB) milling is a widely used and important technique to prepare Transmission Electron Microscopy (TEM) lamella samples. However, it unavoidably introduces contamination in the samples like implanted ions. While the conventional ion-solid simulation model, Binary Collision Approximation (BCA), is unable to describe the \{FIB\} process, a dynamic \{BCA\} model is used in this study to predict the level of Ga implantation along the substrate depth. The \{FIB\} process involves significant material transport and local composition alteration, which requires a dynamic model for simulation. To validate the dynamic \{BCA\} model's application on simulating the \{FIB\} process, atomic level composition analysis Atom Probe Tomography (APT) is performed on Ga \{FIB\} processed silicon samples. The experimental data confirm that the dynamic \{BCA\} model is capable to predict \{FIB\} induced Ga ion implantation in silicon samples.
}
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- C Lopez-Santos, R Alvarez, A Garcia-Valenzuela, V Rico, M Loeffler, A R Gonzalez-Elipe, A Palmero, "Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles" , In Nanotechnology, vol. 27, no. 39, pp. 395702, 2016. [Bibtex & Downloads]
Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles
×Reference
C Lopez-Santos, R Alvarez, A Garcia-Valenzuela, V Rico, M Loeffler, A R Gonzalez-Elipe, A Palmero, "Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles" , In Nanotechnology, vol. 27, no. 39, pp. 395702, 2016.
Abstract
Porous thin films grown at oblique angles by evaporation techniques are formed by tilted nanocolumnar structures which, depending on the material type and growth conditions, associate along certain preferential directions, giving rise to large domains. This arrangement, commonly denoted as bundling association, is investigated in the present work by performing fundamental experiments and growth simulations. It is proved that trapping processes of vapor species at the film surface, together with the shadowing mechanism, mediate the anisotropic widening of the nanocolumns and promote their preferential coalescence along certain directions, giving rise to domains with different shape and size. The role of these two processes is thoroughly studied in connection with the formation of these domains in materials as different as SiO 2 and TiO 2 .
Bibtex
@article{0957-4484-27-39-395702,
author={C Lopez-Santos and R Alvarez and A Garcia-Valenzuela and V Rico and M Loeffler and A R Gonzalez-Elipe and A Palmero},
title={Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles},
journal={Nanotechnology},
volume={27},
number={39},
pages={395702},
url={http://stacks.iop.org/0957-4484/27/i=39/a=395702},
year={2016},
abstract={Porous thin films grown at oblique angles by evaporation techniques are formed by tilted nanocolumnar structures which, depending on the material type and growth conditions, associate along certain preferential directions, giving rise to large domains. This arrangement, commonly denoted as bundling association, is investigated in the present work by performing fundamental experiments and growth simulations. It is proved that trapping processes of vapor species at the film surface, together with the shadowing mechanism, mediate the anisotropic widening of the nanocolumns and promote their preferential coalescence along certain directions, giving rise to domains with different shape and size. The role of these two processes is thoroughly studied in connection with the formation of these domains in materials as different as SiO 2 and TiO 2 .}
}
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2015
- Sayanti Banerjee, Markus Löffler, Uwe Muehle, Katarzyna Berent, Walter Weber, Ehrenfried Zschech, "TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices" , In Advanced Engineering Materials, Wiley Online Library, 2015. [Bibtex & Downloads]
TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices
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Sayanti Banerjee, Markus Löffler, Uwe Muehle, Katarzyna Berent, Walter Weber, Ehrenfried Zschech, "TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices" , In Advanced Engineering Materials, Wiley Online Library, 2015.
Bibtex
@article{banerjee2015tem,
title={TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices},
author={Banerjee, Sayanti and L{\"o}ffler, Markus and Muehle, Uwe and Berent, Katarzyna and Weber, Walter and Zschech, Ehrenfried},
journal={Advanced Engineering Materials},
year={2015},
publisher={Wiley Online Library}
}
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- Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Norman Vogel, Meike Hauschildt, others, "In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures" , In Microelectronic Engineering, Elsevier, vol. 137, pp. 47–53, 2015. [Bibtex & Downloads]
In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures
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Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Norman Vogel, Meike Hauschildt, others, "In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures" , In Microelectronic Engineering, Elsevier, vol. 137, pp. 47–53, 2015.
Bibtex
@article{liao2015situstudy,
title={In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Vogel, Norman and Hauschildt, Meike and others},
journal={Microelectronic Engineering},
volume={137},
pages={47--53},
year={2015},
publisher={Elsevier}
}
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- Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, André Clausner, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Armand Beyer, others, "In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices" , In JoVE (Journal of Visualized Experiments), no. 100, pp. e52447–e52447, 2015. [Bibtex & Downloads]
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
×Reference
Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, André Clausner, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Armand Beyer, others, "In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices" , In JoVE (Journal of Visualized Experiments), no. 100, pp. e52447–e52447, 2015.
Bibtex
@article{liao2015situ,
title={In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and Clausner, Andr{\'e} and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Beyer, Armand and others},
journal={JoVE (Journal of Visualized Experiments)},
number={100},
pages={e52447--e52447},
year={2015}
}
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- Sayanti Banerjee, Uwe Muehle, Markus Löffler, Andre Heinzig, Jens Trommer, Ehrenfried Zschech, "Preparation and characterization of silicon nanowires using SEM/FIB and TEM: Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland" , In International Journal of Materials Research, Carl Hanser Verlag, vol. 106, no. 7, pp. 697–702, 2015. [Bibtex & Downloads]
Preparation and characterization of silicon nanowires using SEM/FIB and TEM: Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland
×Reference
Sayanti Banerjee, Uwe Muehle, Markus Löffler, Andre Heinzig, Jens Trommer, Ehrenfried Zschech, "Preparation and characterization of silicon nanowires using SEM/FIB and TEM: Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland" , In International Journal of Materials Research, Carl Hanser Verlag, vol. 106, no. 7, pp. 697–702, 2015.
Bibtex
@article{banerjee2015preparation,
title={Preparation and characterization of silicon nanowires using SEM/FIB and TEM: Paper presented at “XV International Conference on Electron Microscopy”, 15--18 September 2014, Cracow, Poland},
author={Banerjee, Sayanti and Muehle, Uwe and L{\"o}ffler, Markus and Heinzig, Andre and Trommer, Jens and Zschech, Ehrenfried},
journal={International Journal of Materials Research},
volume={106},
number={7},
pages={697--702},
year={2015},
publisher={Carl Hanser Verlag}
}
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DCN, Silicon Nanowire Path, Silicon Nanowire Path, DCN
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2014
- Markus Löffler, Sayanti Banerjee, Jens Trommer, Andre Heinzig, Walter Weber, Ehrenfried Zschech, "In-Situ Investigations of Individual Nanowires within a FIB/SEM System" , In Microscopy and Microanalysis, Cambridge Univ Press, vol. 20, no. S3, pp. 360–361, 2014. [Bibtex & Downloads]
In-Situ Investigations of Individual Nanowires within a FIB/SEM System
×Reference
Markus Löffler, Sayanti Banerjee, Jens Trommer, Andre Heinzig, Walter Weber, Ehrenfried Zschech, "In-Situ Investigations of Individual Nanowires within a FIB/SEM System" , In Microscopy and Microanalysis, Cambridge Univ Press, vol. 20, no. S3, pp. 360–361, 2014.
Bibtex
@article{loeffler2014situ,
title={In-Situ Investigations of Individual Nanowires within a FIB/SEM System},
author={L{\"o}ffler, Markus and Banerjee, Sayanti and Trommer, Jens and Heinzig, Andre and Weber, Walter and Zschech, Ehrenfried},
journal={Microscopy and Microanalysis},
volume={20},
number={S3},
pages={360--361},
year={2014},
publisher={Cambridge Univ Press}
}
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- Sven Niese, Peter Krüger, Adam Kubec, Stefan Braun, Jens Patommel, Christian G Schroer, Andreas Leson, Ehrenfried Zschech, "Full-field X-ray microscopy with crossed partial multilayer Laue lenses" , In Optics express, Optical Society of America, vol. 22, no. 17, pp. 20008–20013, 2014. [doi] [Bibtex & Downloads]
Full-field X-ray microscopy with crossed partial multilayer Laue lenses
×Reference
Sven Niese, Peter Krüger, Adam Kubec, Stefan Braun, Jens Patommel, Christian G Schroer, Andreas Leson, Ehrenfried Zschech, "Full-field X-ray microscopy with crossed partial multilayer Laue lenses" , In Optics express, Optical Society of America, vol. 22, no. 17, pp. 20008–20013, 2014. [doi]
Bibtex
@article{niese2014full,
title={Full-field X-ray microscopy with crossed partial multilayer Laue lenses},
author={Niese, Sven and Kr{\"u}ger, Peter and Kubec, Adam and Braun, Stefan and Patommel, Jens and Schroer, Christian G and Leson, Andreas and Zschech, Ehrenfried},
journal={Optics express},
volume={22},
number={17},
pages={20008--20013},
year={2014},
publisher={Optical Society of America},
doi={10.1364/OE.22.020008}
}
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- Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Oliver Aubel, Uwe Mühle, Jürgen Gluch, Sven Niese, Yvonne Standke, Rüdiger Rosenkranz, others, "A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities" , In Advanced Engineering Materials, Wiley Online Library, vol. 16, no. 5, pp. 486–493, 2014. [Bibtex & Downloads]
A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities
×Reference
Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Oliver Aubel, Uwe Mühle, Jürgen Gluch, Sven Niese, Yvonne Standke, Rüdiger Rosenkranz, others, "A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities" , In Advanced Engineering Materials, Wiley Online Library, vol. 16, no. 5, pp. 486–493, 2014.
Bibtex
@article{liao2014new,
title={A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and Aubel, Oliver and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Niese, Sven and Standke, Yvonne and Rosenkranz, R{\"u}diger and others},
journal={Advanced Engineering Materials},
volume={16},
number={5},
pages={486--493},
year={2014},
publisher={Wiley Online Library}
}
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- Ehrenfried Zschech, Sven Niese, Markus Löffler, M Jürgen Wolf, "Multi-scale X-ray tomography for process and quality control in 3D TSV packaging" , In Proceeding: International Symposium on Microelectronics, vol. 2014, no. 1, pp. 000184–000187, 2014. [Bibtex & Downloads]
Multi-scale X-ray tomography for process and quality control in 3D TSV packaging
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Ehrenfried Zschech, Sven Niese, Markus Löffler, M Jürgen Wolf, "Multi-scale X-ray tomography for process and quality control in 3D TSV packaging" , In Proceeding: International Symposium on Microelectronics, vol. 2014, no. 1, pp. 000184–000187, 2014.
Bibtex
@inproceedings{zschech2014multi,
title={Multi-scale X-ray tomography for process and quality control in 3D TSV packaging},
author={Zschech, Ehrenfried and Niese, Sven and L{\"o}ffler, Markus and Wolf, M J{\"u}rgen},
booktitle={International Symposium on Microelectronics},
volume={2014},
number={1},
pages={000184--000187},
year={2014},
organization={International Microelectronics Assembly and Packaging Society}
}
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