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Quantifying the electrical transport characteristics of electron-doped La 0.7 Ce 0.3 MnO 3 thin films through hopping energies, Mn valence, and carrier localization length

Reference

A. Thiessen, E. Beyreuther, R. Werner, D. Koelle, R. Kleiner, LM Eng, "Quantifying the electrical transport characteristics of electron-doped La 0.7 Ce 0.3 MnO 3 thin films through hopping energies, Mn valence, and carrier localization length" , In Journal of Physics and Chemistry of Solids, Elsevier, vol. 80, pp. 26–33, 2015.

Bibtex

@article{thiessen2015quantifying,
title={Quantifying the electrical transport characteristics of electron-doped La 0.7 Ce 0.3 MnO 3 thin films through hopping energies, Mn valence, and carrier localization length},
author={Thiessen, A and Beyreuther, E and Werner, R and Koelle, D and Kleiner, R and Eng, LM},
journal={Journal of Physics and Chemistry of Solids},
volume={80},
pages={26--33},
year={2015},
publisher={Elsevier}
}

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