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A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 $\mu$m SiGe BiCMOS
Reference
David Schoeniger, Ronny Henker, Stefan Schumann, Frank Ellinger, "A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 $\mu$m SiGe BiCMOS", In Proceeding: Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International, pp. 1–5, 2013. [doi]
Bibtex
@inproceedings{schoeniger2013low,
title={A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 $\mu$m SiGe BiCMOS},
author={Schoeniger, David and Henker, Ronny and Schumann, Stefan and Ellinger, Frank},
booktitle={Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International},
pages={1--5},
year={2013},
organization={IEEE},
doi={10.1109/ISCDG.2013.6656296}
}
title={A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 $\mu$m SiGe BiCMOS},
author={Schoeniger, David and Henker, Ronny and Schumann, Stefan and Ellinger, Frank},
booktitle={Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International},
pages={1--5},
year={2013},
organization={IEEE},
doi={10.1109/ISCDG.2013.6656296}
}
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