cfaed Publications

@inproceedings{Testa2015c,
abstract = {This paper presents a cascaded single-stage distributed amplifier (CSSDA) for wideband applications implemented in a 0.13 {\&}{\#}956;m SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). A 3 dB upper frequency of 250 GHz, a bandwidth of 170 GHz, and a gain of 13 dB are demonstrated for the fabricated CSSDA. The circuit requires a chip area of 0.23 mm{\&}{\#}x000B2; and 74 mW of DC power. Compared against the state of the art, the presented design achieves the highest speed and the smallest area.},
author = {Testa, Paolo Valerio and Paulo, Robert and Carta, Corrado and Ellinger, Frank},
booktitle = {2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)},
doi = {10.1109/CSICS.2015.7314459},
isbn = {978-1-4799-8494-7},
keywords = {AIM,Bandwidth,BiCMOS integrated circuits,Capacitors,DAAB,Distributed amplifiers,Gain,HAEC-01,Resistors,SPARS,Silicon germanium,Tes15b,cfAED-Res},
mendeley-groups = {CC-Own/Proceedings},
mendeley-tags = {AIM,DAAB,HAEC-01,SPARS,Tes15b,cfAED-Res},
month = {oct},
pages = {1--4},
publisher = {IEEE},
shorttitle = {Compound Semiconductor Integrated Circuit Symposiu},
title = ,
url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7314459},
year = {2015}
}