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High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 $\mu$m SiGe BiCMOS
Reference
D. Schoeniger, R. Henker, F. Ellinger, "High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 $\mu$m SiGe BiCMOS", In Electronics Letters, IET, vol. 52, no. 2, pp. 154–156, 2015.
Bibtex
@article{schoeniger2015high,
title={High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 $\mu$m SiGe BiCMOS},
author={Schoeniger, D and Henker, R and Ellinger, F},
journal={Electronics Letters},
volume={52},
number={2},
pages={154--156},
year={2015},
publisher={IET}
}
title={High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 $\mu$m SiGe BiCMOS},
author={Schoeniger, D and Henker, R and Ellinger, F},
journal={Electronics Letters},
volume={52},
number={2},
pages={154--156},
year={2015},
publisher={IET}
}
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