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Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes
Reference
Yichu Zheng, Axel Fischer, Natalia Sergeeva, Sebastian Reineke, Stefan C. B. Mannsfeld, "Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes", In Organic Electronics, Elsevier BV, vol. 65, pp. 82–90, Feb 2019. [doi]
Bibtex
@article{Zheng_2019,
doi = {10.1016/j.orgel.2018.10.040},
url = {https://doi.org/10.1016%2Fj.orgel.2018.10.040},
year = 2019,
month = {feb},
publisher = {Elsevier {BV}},
volume = {65},
pages = {82--90},
author = {Yichu Zheng and Axel Fischer and Natalia Sergeeva and Sebastian Reineke and Stefan C. B. Mannsfeld},
title = {Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes},
journal = {Organic Electronics}
}
doi = {10.1016/j.orgel.2018.10.040},
url = {https://doi.org/10.1016%2Fj.orgel.2018.10.040},
year = 2019,
month = {feb},
publisher = {Elsevier {BV}},
volume = {65},
pages = {82--90},
author = {Yichu Zheng and Axel Fischer and Natalia Sergeeva and Sebastian Reineke and Stefan C. B. Mannsfeld},
title = {Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes},
journal = {Organic Electronics}
}
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