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Device design-enabled Schottky barrier height extraction for nanoFETs based on the 1D Landauer-Büttiker equation
Reference
Anibal Pacheco-Sanchez, Martin Claus, "Device design-enabled Schottky barrier height extraction for nanoFETs based on the 1D Landauer-Büttiker equation", In Applied Physics Letters, AIP Publishing, vol. 111, no. 16, pp. 163108, Oct 2017. [doi]
Bibtex
@article{Pacheco_Sanchez_2017,
doi = {10.1063/1.4998807},
url = {https://doi.org/10.1063%2F1.4998807},
year = 2017,
month = {oct},
publisher = {{AIP} Publishing},
volume = {111},
number = {16},
pages = {163108},
author = {Anibal Pacheco-Sanchez and Martin Claus},
title = {Device design-enabled Schottky barrier height extraction for {nanoFETs} based on the 1D Landauer-Büttiker equation},
journal = {Applied Physics Letters}
}
doi = {10.1063/1.4998807},
url = {https://doi.org/10.1063%2F1.4998807},
year = 2017,
month = {oct},
publisher = {{AIP} Publishing},
volume = {111},
number = {16},
pages = {163108},
author = {Anibal Pacheco-Sanchez and Martin Claus},
title = {Device design-enabled Schottky barrier height extraction for {nanoFETs} based on the 1D Landauer-Büttiker equation},
journal = {Applied Physics Letters}
}
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