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Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors

Reference

Martin Hartmann, Jana Tittmann-Otto, Simon Böttger, Georg Heldt, Martin Claus, Stefan E. Schulz, Michael Schröter, Sascha Hermann, "Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors" , In ACS Applied Materials & Interfaces, American Chemical Society (ACS), Jun 2020. [doi]

Bibtex

@article{Hartmann_2020,
doi = {10.1021/acsami.0c01171},
url = {https://doi.org/10.1021%2Facsami.0c01171},
year = 2020,
month = {jun},
publisher = {American Chemical Society ({ACS})},
author = {Martin Hartmann and Jana Tittmann-Otto and Simon Böttger and Georg Heldt and Martin Claus and Stefan E. Schulz and Michael Schröter and Sascha Hermann},
title = {Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors},
journal = {{ACS} Applied Materials {\&} Interfaces}
}

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