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A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology

Reference

Stefan Haenzsche, Sebastian Hoppner, Georg Ellguth, Rene Schuffny, "A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology" , In Circuits and Systems II: Express Briefs, IEEE Transactions on, IEEE, vol. 61, no. 11, pp. 835–839, 2014. [doi]

Bibtex

@article{haenzsche201412,
title={A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology},
author={Haenzsche, Stefan and Hoppner, Sebastian and Ellguth, Georg and Schuffny, Rene},
journal={Circuits and Systems II: Express Briefs, IEEE Transactions on},
volume={61},
number={11},
pages={835--839},
year={2014},
publisher={IEEE},
doi={10.1109/TCSII.2014.2345301}
}

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