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Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
Reference
Maik Simon, B. Liang, D. Fischer, M. Knaut, A. Tahn, T. Mikolajick, W. M. Weber, "Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States", In IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), vol. 41, no. 7, pp. 1110–1113, Jul 2020. [doi]
Bibtex
@article{Simon_2020,
doi = {10.1109/led.2020.2997319},
url = {https://doi.org/10.1109%2Fled.2020.2997319},
year = 2020,
month = {jul},
publisher = {Institute of Electrical and Electronics Engineers ({IEEE})},
volume = {41},
number = {7},
pages = {1110--1113},
author = {Maik Simon and B. Liang and D. Fischer and M. Knaut and A. Tahn and T. Mikolajick and W. M. Weber},
title = {Top-Down Fabricated Reconfigurable {FET} With Two Symmetric and High-Current On-States},
journal = {{IEEE} Electron Device Letters}
}
doi = {10.1109/led.2020.2997319},
url = {https://doi.org/10.1109%2Fled.2020.2997319},
year = 2020,
month = {jul},
publisher = {Institute of Electrical and Electronics Engineers ({IEEE})},
volume = {41},
number = {7},
pages = {1110--1113},
author = {Maik Simon and B. Liang and D. Fischer and M. Knaut and A. Tahn and T. Mikolajick and W. M. Weber},
title = {Top-Down Fabricated Reconfigurable {FET} With Two Symmetric and High-Current On-States},
journal = {{IEEE} Electron Device Letters}
}
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