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Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors
Reference
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld, "Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors", In Advanced Electronic Materials, Wiley, Apr 2025. [doi]
Bibtex
@article{Perez_Andrade_2025, title={Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors}, ISSN={2199-160X}, url={http://dx.doi.org/10.1002/aelm.202400312}, DOI={10.1002/aelm.202400312}, journal={Advanced Electronic Materials}, publisher={Wiley}, author={Perez Andrade, Jonathan and Wrzesińska‐Lashkova, Angelika and Prasoon, Anupam and Talnack, Felix and Haase, Katherina and Büchner, Bernd and Feng, Xinliang and Vaynzof, Yana and Hambsch, Mike and Krupskaya, Yulia and Mannsfeld, Stefan C. B.}, year={2025}, month=apr }
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