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Comparison of atomistic quantum transport and numerical device simulation for carbon nanotube field-effect transistors

Reference

Florian Fuchs, Andreas Zienert, Sven Mothes, Martin Claus, Sibylle Gemming, Jorg Schuster, "Comparison of atomistic quantum transport and numerical device simulation for carbon nanotube field-effect transistors" , In Proceeding: Simulation of Semiconductor Processes and Devices (SISPAD), 2016 International Conference on, pp. 261–264, 2016.

Bibtex

@inproceedings{fuchs2016comparison,
title={Comparison of atomistic quantum transport and numerical device simulation for carbon nanotube field-effect transistors},
author={Fuchs, Florian and Zienert, Andreas and Mothes, Sven and Claus, Martin and Gemming, Sibylle and Schuster, Jorg},
booktitle={Simulation of Semiconductor Processes and Devices (SISPAD), 2016 International Conference on},
pages={261--264},
year={2016},
organization={IEEE}
}

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