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Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits

Reference

J. Trommer, A. Heinzig, S. Slesazeck, U. Mühle, M. Löffler, D. Walter, C. Mayr, T. Mikolajick, W. M. Weber, "Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits" , In Proceeding: 2017 75th Annual Device Research Conference (DRC), IEEE, Jun 2017. [doi]

Bibtex

@inproceedings{Trommer2017,
doi = {10.1109/drc.2017.7999426},
url = {https://doi.org/10.1109/drc.2017.7999426},
year = {2017},
month = {jun},
publisher = ,
author = {J. Trommer and A. Heinzig and S. Slesazeck and U. Mühle and M. Löffler and D. Walter and C. Mayr and T. Mikolajick and W. M. Weber},
title = {Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits},
booktitle = {2017 75th Annual Device Research Conference ({DRC})}
}

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