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Irradiation and Post-Annealed nMOSFETs with Al implanted p-well: Limit of Robustness.
Reference
M. Cabello, M. Florentin, M. Alexandru, B. Schmidt, J. Rebollo, J. Montserrat, J. Millàn, P. Godignon, "Irradiation and Post-Annealed nMOSFETs with Al implanted p-well: Limit of Robustness.", In Proceeding: Materials Science Forum, vol. 858, 2016.
Bibtex
@inproceedings{cabello2016irradiation,
title={Irradiation and Post-Annealed nMOSFETs with Al implanted p-well: Limit of Robustness.},
author={Cabello, M and Florentin, M and Alexandru, M and Schmidt, B and Rebollo, J and Montserrat, J and Mill{\`a}n, J and Godignon, P},
booktitle={Materials Science Forum},
volume={858},
year={2016}
}
title={Irradiation and Post-Annealed nMOSFETs with Al implanted p-well: Limit of Robustness.},
author={Cabello, M and Florentin, M and Alexandru, M and Schmidt, B and Rebollo, J and Montserrat, J and Mill{\`a}n, J and Godignon, P},
booktitle={Materials Science Forum},
volume={858},
year={2016}
}
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