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Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to AlGaN/GaN layers

Reference

A. Garitagoitia Cid, R. Rosenkranz, M. Löffler, A. Clausner, Y. Standke, E. Zschech, "Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to AlGaN/GaN layers" , In Ultramicroscopy, Elsevier BV, vol. 195, pp. 47–52, Dec 2018. [doi]

Bibtex

@article{GaritagoitiaCid2018,
doi = {10.1016/j.ultramic.2018.08.026},
url = {https://doi.org/10.1016/j.ultramic.2018.08.026},
year = {2018},
month = {dec},
publisher = {Elsevier {BV}},
volume = {195},
pages = {47--52},
author = {A. Garitagoitia Cid and R. Rosenkranz and M. L\"{o}ffler and A. Clausner and Y. Standke and E. Zschech},
title = {Quantitative analysis of backscattered electron ({BSE}) contrast using low voltage scanning electron microscopy ({LVSEM}) and its application to {AlGaN}/{GaN} layers},
journal = {Ultramicroscopy}
}

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