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Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si (001)
Reference
M. Brehm, M. Grydlik, F. Schäffler, OG Schmidt, "Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si (001)", In Microelectronic Engineering, Elsevier, vol. 125, pp. 22–27, 2014.
Bibtex
@article{brehm2014evolution,
title={Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si (001)},
author={Brehm, M and Grydlik, M and Sch{\"a}ffler, F and Schmidt, OG},
journal={Microelectronic Engineering},
volume={125},
pages={22--27},
year={2014},
publisher={Elsevier}
}
title={Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si (001)},
author={Brehm, M and Grydlik, M and Sch{\"a}ffler, F and Schmidt, OG},
journal={Microelectronic Engineering},
volume={125},
pages={22--27},
year={2014},
publisher={Elsevier}
}
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