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Operation regimes and electrical transport of steep slope Schottky Si-FinFETs
Reference
Dae-Young Jeon, Jian Zhang, Jens Trommer, So Jeong Park, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Thomas Mikolajick, Walter M. Weber, "Operation regimes and electrical transport of steep slope Schottky Si-FinFETs", In Journal of Applied Physics, AIP Publishing, vol. 121, no. 6, pp. 064504, Feb 2017. [doi]
Bibtex
@article{Jeon_2017,
doi = {10.1063/1.4975475},
url = {https://doi.org/10.1063%2F1.4975475},
year = 2017,
month = {feb},
publisher = {{AIP} Publishing},
volume = {121},
number = {6},
pages = {064504},
author = {Dae-Young Jeon and Jian Zhang and Jens Trommer and So Jeong Park and Pierre-Emmanuel Gaillardon and Giovanni De Micheli and Thomas Mikolajick and Walter M. Weber},
title = {Operation regimes and electrical transport of steep slope Schottky Si-{FinFETs}},
journal = {Journal of Applied Physics}
}
doi = {10.1063/1.4975475},
url = {https://doi.org/10.1063%2F1.4975475},
year = 2017,
month = {feb},
publisher = {{AIP} Publishing},
volume = {121},
number = {6},
pages = {064504},
author = {Dae-Young Jeon and Jian Zhang and Jens Trommer and So Jeong Park and Pierre-Emmanuel Gaillardon and Giovanni De Micheli and Thomas Mikolajick and Walter M. Weber},
title = {Operation regimes and electrical transport of steep slope Schottky Si-{FinFETs}},
journal = {Journal of Applied Physics}
}
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