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Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors
Reference
Eunhye Baek, Taiuk Rim, Julian Schütt, Chang-ki Baek, Kihyun Kim, Larysa Baraban, Gianaurelio Cuniberti, "Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors", In Nano Letters, American Chemical Society (ACS), vol. 17, no. 11, pp. 6727–6734, Oct 2017. [doi]
Bibtex
@article{Baek_2017,
doi = {10.1021/acs.nanolett.7b02788},
url = {https://doi.org/10.1021%2Facs.nanolett.7b02788},
year = 2017,
month = {oct},
publisher = {American Chemical Society ({ACS})},
volume = {17},
number = {11},
pages = {6727--6734},
author = {Eunhye Baek and Taiuk Rim and Julian Schütt and Chang-ki Baek and Kihyun Kim and Larysa Baraban and Gianaurelio Cuniberti},
title = {Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors},
journal = {Nano Letters}
}
doi = {10.1021/acs.nanolett.7b02788},
url = {https://doi.org/10.1021%2Facs.nanolett.7b02788},
year = 2017,
month = {oct},
publisher = {American Chemical Society ({ACS})},
volume = {17},
number = {11},
pages = {6727--6734},
author = {Eunhye Baek and Taiuk Rim and Julian Schütt and Chang-ki Baek and Kihyun Kim and Larysa Baraban and Gianaurelio Cuniberti},
title = {Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors},
journal = {Nano Letters}
}
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