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Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks
Reference
Tom Mauersberger, Jens Trommer, Saurabh Sharma, Martin Knaut, Darius Pohl, Bernd Rellinghaus, Thomas Mikolajick, André Heinzig, "Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks", In Semiconductor Science and Technology, IOP Publishing, vol. 36, no. 9, pp. 095025, Aug 2021. [doi]
Bibtex
@article{Mauersberger_2021,
doi = {10.1088/1361-6641/ac1827},
url = {https://doi.org/10.1088%2F1361-6641%2Fac1827},
year = 2021,
month = {aug},
publisher = {{IOP} Publishing},
volume = {36},
number = {9},
pages = {095025},
author = {Tom Mauersberger and Jens Trommer and Saurabh Sharma and Martin Knaut and Darius Pohl and Bernd Rellinghaus and Thomas Mikolajick and Andr{\'{e}} Heinzig},
title = {Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide ({HZO})/titanium nitride ({TiN}) stacks},
journal = {Semiconductor Science and Technology}
}
doi = {10.1088/1361-6641/ac1827},
url = {https://doi.org/10.1088%2F1361-6641%2Fac1827},
year = 2021,
month = {aug},
publisher = {{IOP} Publishing},
volume = {36},
number = {9},
pages = {095025},
author = {Tom Mauersberger and Jens Trommer and Saurabh Sharma and Martin Knaut and Darius Pohl and Bernd Rellinghaus and Thomas Mikolajick and Andr{\'{e}} Heinzig},
title = {Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide ({HZO})/titanium nitride ({TiN}) stacks},
journal = {Semiconductor Science and Technology}
}
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