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1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology

Reference

Uroschanit Yodprasit, Kosuke Katayama, Ryuichi Fujimoto, Mizuki Motoyoshi, Minoru Fujishima, "1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology" , In Proceeding: Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International, pp. 1–4, 2013. [doi]

Bibtex

@inproceedings{yodprasit20131,
title={1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology},
author={Yodprasit, Uroschanit and Katayama, Kosuke and Fujimoto, Ryuichi and Motoyoshi, Mizuki and Fujishima, Minoru},
booktitle={Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International},
pages={1--4},
year={2013},
organization={IEEE},
doi={10.1109/ISCDG.2013.6656291}
}

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