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A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs
Reference
Matthieu Florentin, James Millan, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Benedikt Schmidt, "A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs", In Proceeding: Solid State Device Research Conference (ESSDERC), 2014 44th European, pp. 150–153, 2014.
Bibtex
@inproceedings{florentin2014positive,
title={A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs},
author={Florentin, Matthieu and Millan, James and Godignon, Philippe and Alexandru, Mihaela and Constant, Aurore and Schmidt, Benedikt},
booktitle={Solid State Device Research Conference (ESSDERC), 2014 44th European},
pages={150--153},
year={2014},
organization={IEEE}
}
title={A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs},
author={Florentin, Matthieu and Millan, James and Godignon, Philippe and Alexandru, Mihaela and Constant, Aurore and Schmidt, Benedikt},
booktitle={Solid State Device Research Conference (ESSDERC), 2014 44th European},
pages={150--153},
year={2014},
organization={IEEE}
}
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