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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
Reference
Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, André Clausner, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Armand Beyer, others, "In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices", In JoVE (Journal of Visualized Experiments), no. 100, pp. e52447–e52447, 2015.
Bibtex
@article{liao2015situ,
title={In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and Clausner, Andr{\'e} and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Beyer, Armand and others},
journal={JoVE (Journal of Visualized Experiments)},
number={100},
pages={e52447--e52447},
year={2015}
}
title={In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and Clausner, Andr{\'e} and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Beyer, Armand and others},
journal={JoVE (Journal of Visualized Experiments)},
number={100},
pages={e52447--e52447},
year={2015}
}
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