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High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

Reference

G. Darbandy, M. Claus, M. Schröter, "High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design" , In IEEE Transactions on Nanotechnology, vol. 15, no. 2, pp. 289-294, March 2016. [doi]

Bibtex

@ARTICLE{7394187,
author={G. Darbandy and M. Claus and M. Schröter},
journal={IEEE Transactions on Nanotechnology},
title={High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design},
year={2016},
volume={15},
number={2},
pages={289-294},
keywords={elemental semiconductors;field effect transistors;nanowires;semiconductor device models;silicon;Si;device simulation;n-type polarity;nanowire;p-type polarity;reconfigurable field-effect transistors;Control systems;Data models;Field effect transistors;Logic gates;Schottky barriers;Silicon;RFET;Reconfigurable/Reprogrammable transistor;Reconfigurable/reprogrammable transistor;Schottky Barrier Source/Drain;Schottky barrier source/drain;Si nanowire},
doi={10.1109/TNANO.2016.2521897},
ISSN={1536-125X},
month={March},}

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