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A Top-Down Platform Enabling Ge Based Reconfigurable Transistors

Reference

Raphael Böckle, Masiar Sistani, Boris Lipovec, Darius Pohl, Bernd Rellinghaus, Alois Lugstein, Walter M. Weber, "A Top-Down Platform Enabling Ge Based Reconfigurable Transistors", In Advanced Materials Technologies, vol. n/a, no. n/a, pp. 2100647. [doi]

Abstract

Abstract Conventional field-effect transistor (FET) concepts are limited to static electrical functions and demand extraordinarily steep and reproducible doping concentration gradients. Reaching the physical limits of scaling, doping-free reconfigurable field-effect transistors (RFETs) capable of dynamically altering the device operation between p- or n-type, even during runtime, are emerging device concepts. In this respect, Ge has been identified as a promising channel material to enable reduction of power consumption and switching delay of RFETs. Nevertheless, its use has been limited to simulations and bottom-up demonstrators not compatible with complex circuit technology. In this work, a deterministic top-down fabrication scheme is demonstrated to realize a Ge-based RFET architecture and exploring realizations with three independent gates. Polarity control and leakage current suppression are enabled by the specific injection of charge carriers through gated Al-Ge heterojunctions and the introduction of a blocking electrostatic energy barrier. Further, the choice of monolithic Al/Ge contacts alleviates process variability compared to Ni-germanide contacts presenting a top-down technology platform for Ge-based RFETs. Our device concept is a first step toward future integrated high-performance and low-power reconfigurable circuits, providing a platform for future energy-efficient systems as well as hardware security integrated circuits.

Bibtex

@article{https://doi.org/10.1002/admt.202100647,
author = {Böckle, Raphael and Sistani, Masiar and Lipovec, Boris and Pohl, Darius and Rellinghaus, Bernd and Lugstein, Alois and Weber, Walter M.},
title = {A Top-Down Platform Enabling Ge Based Reconfigurable Transistors},
journal = {Advanced Materials Technologies},
volume = {n/a},
number = {n/a},
pages = {2100647},
keywords = {electrostatic doping, germanium, metal-semiconductor heterostructures, polarity control, reconfigurable transistors},
doi = {https://doi.org/10.1002/admt.202100647},
url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/admt.202100647},
eprint = {https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202100647},
abstract = {Abstract Conventional field-effect transistor (FET) concepts are limited to static electrical functions and demand extraordinarily steep and reproducible doping concentration gradients. Reaching the physical limits of scaling, doping-free reconfigurable field-effect transistors (RFETs) capable of dynamically altering the device operation between p- or n-type, even during runtime, are emerging device concepts. In this respect, Ge has been identified as a promising channel material to enable reduction of power consumption and switching delay of RFETs. Nevertheless, its use has been limited to simulations and bottom-up demonstrators not compatible with complex circuit technology. In this work, a deterministic top-down fabrication scheme is demonstrated to realize a Ge-based RFET architecture and exploring realizations with three independent gates. Polarity control and leakage current suppression are enabled by the specific injection of charge carriers through gated Al-Ge heterojunctions and the introduction of a blocking electrostatic energy barrier. Further, the choice of monolithic Al/Ge contacts alleviates process variability compared to Ni-germanide contacts presenting a top-down technology platform for Ge-based RFETs. Our device concept is a first step toward future integrated high-performance and low-power reconfigurable circuits, providing a platform for future energy-efficient systems as well as hardware security integrated circuits.}
}

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