Press Releases / Pressemitteilungen

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• TU Dresden represented with joint booth of 5G Lab Germany, the cfaed Cluster of Excellence and the HAEC Collaborative Research Centre at the important conference on Design, Automation and Test in Europe
• Accompanied by: the first cfaed Symposium “Advancing Electronics”

Every two years the DATE conference makes a stop in Dresden. It is a prime, international event for all industry and science stakeholders involved in the design and engineering of Systems-on-Chip, Systems-on-Board and Embedded Systems Software. Apart from the participating scientists, TU Dresden is also represented at the accompanying exhibition with a joint booth of 5G Lab Germany, the Cluster of Excellence ‘Center for Advancing Electronics Dresden’ (cfaed) and the Collaborative Research Centre 912 ‘Highly Adaptive Energy-Efficient Computing’ (HAEC).

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A group of physicists from the cfaed at TU Dresden, together with researchers from Japan, were able to demonstrate in a study how the doping of organic semiconductors can be simulated and experimentally verified. The study has now been published in “Nature Materials”.

In semiconductor technology, doping refers to the intentional introduction of impurities (also known as dopants) into a layer or into the intrinsic semiconductor of an integrated circuit. These dopants are deliberate modifications of the semiconductor, with which the behavior of the electrons and thus the electrical conductivity of the intrinsic material can be controlled. Even the smallest amounts of dopants can have a strong impact on the electrical conductivity. Electronic modifications by doping make semiconductors functional in all major electronic devices – the backbone of the electronics industry.