cfaed Publications

@article{Huang2016390,
title = Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment,
journal = Microelectronics Reliability,
volume = 64,
number = ,
pages = 390 - 392,
year = 2016,
note = Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,
issn = 0026-2714,
doi = http://dx.doi.org/10.1016/j.microrel.2016.07.087,
url = http://www.sciencedirect.com/science/article/pii/S002627141630230X,
author = J. Huang and M. Löffler and W. Moeller and E. Zschech,
keywords = FIB,
keywords = APT,
keywords = BCA,
abstract = Abstract Focused Ion Beam (FIB) milling is a widely used and important technique to prepare Transmission Electron Microscopy (TEM) lamella samples. However, it unavoidably introduces contamination in the samples like implanted ions. While the conventional ion-solid simulation model, Binary Collision Approximation (BCA), is unable to describe the \{FIB\} process, a dynamic \{BCA\} model is used in this study to predict the level of Ga implantation along the substrate depth. The \{FIB\} process involves significant material transport and local composition alteration, which requires a dynamic model for simulation. To validate the dynamic \{BCA\} model's application on simulating the \{FIB\} process, atomic level composition analysis Atom Probe Tomography (APT) is performed on Ga \{FIB\} processed silicon samples. The experimental data confirm that the dynamic \{BCA\} model is capable to predict \{FIB\} induced Ga ion implantation in silicon samples.
}