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In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures
Reference
Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Norman Vogel, Meike Hauschildt, others, "In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures", In Microelectronic Engineering, Elsevier, vol. 137, pp. 47–53, 2015.
Bibtex
@article{liao2015situstudy,
title={In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Vogel, Norman and Hauschildt, Meike and others},
journal={Microelectronic Engineering},
volume={137},
pages={47--53},
year={2015},
publisher={Elsevier}
}
title={In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures},
author={Liao, Zhongquan and Gall, Martin and Yeap, Kong Boon and Sander, Christoph and M{\"u}hle, Uwe and Gluch, J{\"u}rgen and Standke, Yvonne and Aubel, Oliver and Vogel, Norman and Hauschildt, Meike and others},
journal={Microelectronic Engineering},
volume={137},
pages={47--53},
year={2015},
publisher={Elsevier}
}
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